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Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Page-Program
The Page-Program instruction programs up to 256 Bytes of data in the memory. The data for the
selected page address must be in the erased state (FFH) before initiating the Page-Program operation.
A Page-Program applied to a protected memory area will be ignored. Prior to the program operation,
execute the WREN instruction.
To execute a Page-Program operation, the host drives CE# low then sends the Page Program com-
mand cycle (02H), three address cycles followed by the data to be programmed, then drives CE# high.
The programmed data must be between 1 to 256 Bytes and in whole Byte increments; sending an odd
number of nibbles will cause the last nibble to be ignored. Each cycle is two nibbles (clocks) long, most
significant bit first. Poll the BUSY bit in the Status register or wait T PP for the completion of the internal,
self-timed, Page-Program operat i on. See Figure 18 for the Page-Program sequence.
When executing Page-Program, the memory range for the SST26VF016/032 is divided into 256 Byte
page boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last
256 Bytes of data as the correct data to be programmed. If the target address for the Page-Program
instruction is not the beginning of the page boundary (A7:A0 are not all zero), and the number of data
input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap
around and will be programmed at the start of that target page.
CE#
MODE 3
0
2
4
6
8
10
12
542
SCK
MODE 0
SIO(3:0)
C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2
MSN LSN
Data Byte 0 Data Byte 1 Data Byte 2
HN LN
Data Byte 255
1359 F10.0
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble
C[1:0] = 02H
Figure 18: Page-Program Sequence
Write-Suspend and Write-Resume
Write-Suspend allows the interruption of Sector-Erase, Block-Erase or Page-Program operations in
order to erase, program, or read data in another portion of memory. The original operation can be con-
tinued with the Write-Resume command.
Only one write operation can be suspended at a time; if an operation is already suspended, the device
will ignore the Write-Suspend command. Write-Suspend during Chip-Erase is ignored; Chip-Erase is
not a valid command while a write is suspended.
?2011 Silicon Storage Technology, Inc.
21
DS-25017A
04/11
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